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Sicoxs Corp developed a method for manufacturing single-crystal silicon carbide (SiC) substrates, which are used for SiC power devices, at a cost half that of a conventional method.

The cost reduction is realized by reducing the thickness of single-crystal SiC. First, a single-crystal SiC substrate is attached to a polycrystalline SiC substrate. Then, the single-crystal substrate is peeled from the polycrystalline substrate while being heated and leaving part of the single-crystal substrate on the polycrystalline substrate.

After the part of the single-crystal substrate is polished, etc, it is shipped as a substrate for the production of power devices. To manufacture power devices, device structures are formed on the single-crystal SiC.

The single-crystal substrate removed from the polycrystalline substrate is reused by being attached to another polycrystalline substrate. And the above-mentioned process is repeated. In this way, a single-crystal substrate is used several times to produce several thin substrates, lowering the cost per substrate.

Sicoxs prototyped a diode by using the new method. When the diode was evaluated by a research group led by Jun Suda, associate professor, Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, it functioned without any problem, Sicoxs said.

Sicoxs announced the details of the new method at ICSCRM 2013, an international academic conference on SiC-related technologies, which took place from Sept 29 to Oct 4, 2013, in Miyazaki Prefecture, Japan.