Sony Corp delivered a lecture on the ReRAM (resistive random-access memory) that it has been developing in cooperation with Micron Technology Inc at Flash Memory Summit (FMS) 2013.
FMS 2013 is an international conference/exhibition on flash memory technologies. It took place from Aug 13 to 15, 2013, in Santa Clara, Calif, the US.
Currently, Sony is developing an ReRAM in the aim of realizing a storage-class memory (SCM) that fills the performance gap between DRAM and NAND flash memory. And it plans to emphasize that the new memory enables to reduce the amount of DRAM used for large-capacity enterprise NAND storages as well as for consumer devices such as smartphones and tablet computers.
Sony chose ReRAM as its SCM because its memory cell can be made using advanced process technologies and a cross-point cell array can be used for it, making it easy to increase memory density.
The company has been engaged in the development of conductive bridge RAM (CBRAM), which uses a bridge formed with metal atoms between electrodes, and already confirmed a scalability to about 10nm. Because it does not have production capacity for advanced memories, it tied up with Micron in 2011 and has been co-developing memories since then.
In the lecture, Sony announced its plan to commercialize 16-Gbit-class ReRAM in 2015. It expects to use 20nm-or-so process technology for the chip. And it seems to have already started to design a test chip.