Sumitomo Electric Industries Ltd unveiled an SiC MOSFET and a so-called "full-SiC" power module using the MOSFET and an SiC Schottky barrier diode.
The SiC MOSFET is being developed by the company. The SiC MOSFET and power module were exhibited at PCIM 2013, which took place from May 14 to 16, 2013, in Nuremberg, Germany.
"We announced the SiC MOSFET at an academic conference last year (in 2012), but this is the first time that we have showed it at a trade show," Sumitomo Electric said.
The withstand voltage and output current of the power module are 1,200V and 100A, respectively. Its resistance at room temperatures is 12mΩ. It supports 50kHz switching. Currently, Sumitomo Electric is developing a power module that has the same withstand voltage and reduced inductance components.
For the future, Sumitomo Electric plans to increase the withstand voltage to 1,700V, 2,200V and 3,300V. At its booth, the company disclosed some of the specifications of a 1,700V full-SiC module. Its output current and resistance are 400A and 7mΩ, and it supports 50kHz switching.
Sumitomo Electric did not comment on the commercialization of the power modules. And it was not allowed to take a picture of the exhibited objects.