[Click to enlarge image]

Cree Inc showed a new power module equipped with the second-generation SiC MOSFET that it announced in March 2013.

The power module was exhibited at PCIM 2013, an event about power electronics, which runs from May 14 to 16, 2013, in Nuremberg, Germany. It is a so-called "full-SiC" module and uses SiC for diodes, too. It is targeted at three-phase inverters.

The most distinguished feature of the second-generation SiC MOSFET is its low cost. Compared with the first-generation product, Cree put more effort for lowering the cost of the the second-generation product. The new product is the company's first power module equipped with the second-generation SiC MOSFET.

The withstand voltage of the new power module is 1,200V. At a room temperature (25°C) and a temperature of 100°C, it can deal with currents of 87A and 50A, respectively. With a temperature of 150°C, voltage of 600V and current of 50A, its switching loss is 1.7mJ. And the switching loss is about 1/6 that of an IGBT module whose withstand voltage is 1,200V.