A prototyped GaN device with the TO247 package (left) and a 6-inch wafer on which the device is formed (right) (photo courtesy of Fujitsu Semiconductor)
A prototyped GaN device with the TO247 package (left) and a 6-inch wafer on which the device is formed (right) (photo courtesy of Fujitsu Semiconductor)

Fujitsu's GaN Power Device Realizes 2.5kW Power Supply

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