Samsung Electronics Co has developed what it says is the world's first 4Gb DDR3 DRAM chip, using 50nm process technology.
For the new generation of "green" servers, the 4Gb DDR3's high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
According to Samsung, the 4Gb DDR3 can be produced in 16GB registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for notebook PCs.
By applying dual-die package technology, this device can deliver modules of up to 32GB, offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.
The low-powered 4Gb DDR3 DRAM operates at 1.35V, therein improving its throughput by 20% over a 1.5V DDR3. Its maximum speed is 1.6Gbps.
In 16GB module configurations, 4Gb DDR3 can consume 40% less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs 64 chips).